参数名
参数值
参数名
参数值
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.29.00.95
Automotive
Unknown
PPAP
Unknown
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
100
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
60
Maximum Drain Source Resistance (MOhm)
18@10V
Typical Gate Charge @ Vgs (nC)
49@10V
Typical Gate Charge @ 10V (nC)
49
Typical Input Capacitance @ Vds (pF)
2650@25V
Maximum Power Dissipation (mW)
176000
Typical Fall Time (ns)
37
Typical Rise Time (ns)
40
Typical Turn-Off Delay Time (ns)
43
Typical Turn-On Delay Time (ns)
27
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
通孔
Package Height
9.4(Max)
Package Width
4.7(Max)
Package Length
10.3(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-220AB
Continuous Drain Current
60(A)
Drain-Source On-Volt
100(V)
Operating Temperature Classification
Military
Package Type
TO-220AB
Operating Temp Range
-55C to 175C
Gate-Source Voltage (Max)
±20(V)
Number of Elements
1
Rad Hardened
无
Continuous Drain Current Id
60A
Qualification
-
零件状态
活跃
类型
功率MOSFET
引脚数量
3
极性
N
配置
Single
功率耗散
176(W)
信道型
N