参数名
参数值
参数名
参数值
包装/外壳
TO-220-3
EU RoHS
Compliant
Automotive
Unknown
PPAP
Unknown
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
75
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
98
Maximum Drain Source Resistance (MOhm)
10@10V
Typical Gate Charge @ Vgs (nC)
68@10V
Typical Gate Charge @ 10V (nC)
68
Typical Input Capacitance @ Vds (pF)
3100@25V
Maximum Power Dissipation (mW)
230000
Typical Fall Time (ns)
27
Typical Rise Time (ns)
42
Typical Turn-Off Delay Time (ns)
42
Typical Turn-On Delay Time (ns)
20
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Mounting
通孔
Package Height
9.15(Max)
Package Width
4.82(Max)
Package Length
10.66(Max)
PCB changed
3
Tab
Tab
Supplier Package
TO-220AB
Vds - Drain-Source Breakdown Voltage
75 V
Pd - Power Dissipation
200 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Rds On - Drain-Source Resistance
10 mOhms
Id - Continuous Drain Current
98 A
零件状态
Obsolete
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
信道型
N