Littelfuse IXTT1N450HV

包装/外壳

TO-268-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

4500

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

6

Maximum Continuous Drain Current (A)

1

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (mOhm)

80000@10V

Typical Gate Charge @ Vgs (nC)

40@10V

Typical Gate Charge @ 10V (nC)

40

Typical Input Capacitance @ Vds (pF)

1730@25V

Supplier Package

TO-268

Tab

Tab

PCB changed

2

Package Length

16.05(Max)

Package Width

14(Max)

Package Height

5.1(Max)

Mounting

表面贴装

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

34

Typical Turn-Off Delay Time (ns)

58

Typical Rise Time (ns)

60

Typical Fall Time (ns)

127

Maximum Power Dissipation (mW)

520000

Continuous Drain Current

1(A)

Drain-Source On-Volt

4500(V)

Operating Temperature Classification

Military

Package Type

TO-268

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Number of Elements

1

Rad Hardened

无

Qualification

-

Continuous Drain Current Id

1A

Vds - Drain-Source Breakdown Voltage

4.5 kV

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

520 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

46 nC

Rds On - Drain-Source Resistance

80 Ohms

Id - Continuous Drain Current

3 A

系列

IXTT1N450

零件状态

活跃

类型

功率MOSFET

技术

Si

引脚数量

3

极性

N

配置

Single

通道数量

1 Channel

功率耗散

520(W)

信道型

N