Littelfuse IXTT26N50P

包装/外壳

TO-268-3

Supplier Package

TO-268

Tab

Tab

PCB changed

2

Package Length

16.05(Max)

Package Width

14(Max)

Package Height

5.1(Max)

Mounting

表面贴装

Maximum Operating Temperature (°C)

150

Minimum Operating Temperature (°C)

-55

Typical Turn-On Delay Time (ns)

20

Typical Turn-Off Delay Time (ns)

58

Typical Rise Time (ns)

25

Typical Fall Time (ns)

20

Maximum Power Dissipation (mW)

400000

Typical Input Capacitance @ Vds (pF)

3600@25V

Typical Gate Charge @ 10V (nC)

65

Typical Gate Charge @ Vgs (nC)

65@10V

Maximum Drain Source Resistance (MOhm)

230@10V

Maximum Continuous Drain Current (A)

26

Maximum Gate Source Voltage (V)

±30

Maximum Drain Source Voltage (V)

500

Number of Elements per Chip

1

Channel Mode

Enhancement

Category

功率MOSFET

PPAP

无

Automotive

无

SVHC Exceeds Threshold

有

SVHC

有

HTS

8541.29.00.95

ECCN (US)

EAR99

EU RoHS

符合免除

Continuous Drain Current

26(A)

Drain-Source On-Volt

500(V)

Operating Temperature Classification

Military

Package Type

TO-268

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Number of Elements

1

Rad Hardened

无

Vds - Drain-Source Breakdown Voltage

500 V

Vgs th - Gate-Source Threshold Voltage

5.5 V

Pd - Power Dissipation

400 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

65 nC

Rds On - Drain-Source Resistance

230 mOhms

Id - Continuous Drain Current

26 A

系列

IXTT26N50

零件状态

活跃

类型

功率MOSFET

技术

Si

引脚数量

3

极性

N

配置

Single

通道数量

1 Channel

功率耗散

400(W)

信道型

N