Littelfuse IXTT4N150HV

包装/外壳

TO-268-3

EU RoHS

符合免除

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

1500

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

4

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

6000@10V

Typical Gate Charge @ Vgs (nC)

44.5@10V

Typical Gate Charge @ 10V (nC)

44.5

Typical Input Capacitance @ Vds (pF)

1576@25V

Maximum Power Dissipation (mW)

280000

Typical Fall Time (ns)

22

Typical Rise Time (ns)

23

Typical Turn-Off Delay Time (ns)

42

Typical Turn-On Delay Time (ns)

19

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Vds - Drain-Source Breakdown Voltage

1.5 kV

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

280 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

375 nC

Rds On - Drain-Source Resistance

6 Ohms

Id - Continuous Drain Current

4 A

零件状态

活跃

技术

Si

配置

Single

通道数量

1 Channel

信道型

N