Littelfuse IXTT68P20T

包装/外壳

TO-268-3

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

200

Maximum Gate Source Voltage (V)

±15

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

68

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (mOhm)

55@10V

Typical Gate Charge @ Vgs (nC)

380@10V

Typical Gate Charge @ 10V (nC)

380

Maximum Power Dissipation (mW)

568000

Typical Fall Time (ns)

18

Typical Rise Time (ns)

29

Typical Turn-Off Delay Time (ns)

115

Typical Turn-On Delay Time (ns)

63

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

5.1(Max)

Package Width

14(Max)

Package Length

16.05(Max)

PCB changed

2

Tab

Tab

Supplier Package

TO-268

Continuous Drain Current Id

68A

Qualification

-

MSL

-

Vds - Drain-Source Breakdown Voltage

200 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

568 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 15 V, + 15 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

380 nC

Rds On - Drain-Source Resistance

55 mOhms

Id - Continuous Drain Current

68 A

系列

IXTT68P20

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

568W

信道型

P