参数名
参数值
参数名
参数值
包装/外壳
TO-247-3
EU RoHS
符合免除
ECCN (US)
EAR99
HTS
8541.29.00.95
SVHC
有
SVHC Exceeds Threshold
有
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
100
Maximum Gate Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
200
Maximum Gate Source Leakage Current (nA)
200
Maximum IDSS (uA)
10
Maximum Drain Source Resistance (MOhm)
11@10V
Typical Gate Charge @ Vgs (nC)
540@10V
Typical Gate Charge @ 10V (nC)
540
Typical Gate to Drain Charge (nC)
226
Typical Gate to Source Charge (nC)
115
Typical Reverse Recovery Charge (nC)
3000
Typical Input Capacitance @ Vds (pF)
23000@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
610
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
3200
Maximum Power Dissipation (mW)
1040000
Typical Fall Time (ns)
27
Typical Rise Time (ns)
225
Typical Turn-Off Delay Time (ns)
127
Typical Turn-On Delay Time (ns)
40
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Positive Gate Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
500
Typical Gate Plateau Voltage (V)
6
Typical Reverse Recovery Time (ns)
245
Maximum Diode Forward Voltage (V)
1.4
Mounting
通孔
Package Height
21.34(Max)
Package Width
5.21(Max)
Package Length
16.13(Max)
PCB changed
3
Tab
Tab
Supplier Package
ISOPLUS 247
Qualification
-
Continuous Drain Current Id
200A
Vds - Drain-Source Breakdown Voltage
100 V
Vgs th - Gate-Source Threshold Voltage
4.5 V
Pd - Power Dissipation
1.04 kW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Qg - Gate Charge
540 nC
Rds On - Drain-Source Resistance
11 mOhms
Id - Continuous Drain Current
200 A
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
功率耗散
1.04kW
信道型
N