参数名
参数值
参数名
参数值
包装/外壳
TO-247-3
EU RoHS
符合免除
ECCN (US)
EAR99
HTS
8541.29.00.95
SVHC
有
SVHC Exceeds Threshold
有
Automotive
无
PPAP
无
Category
功率MOSFET
Channel Mode
Enhancement
Number of Elements per Chip
1
Maximum Drain Source Voltage (V)
200
Maximum Gate Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
90
Maximum Drain Source Resistance (mOhm)
44@10V
Typical Gate Charge @ Vgs (nC)
205@10V
Typical Gate Charge @ 10V (nC)
205
Typical Input Capacitance @ Vds (pF)
12000@25V
Maximum Power Dissipation (mW)
890000
Typical Fall Time (ns)
28
Typical Rise Time (ns)
60
Typical Turn-Off Delay Time (ns)
89
Typical Turn-On Delay Time (ns)
32
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
通孔
Package Height
21.34(Max)
Package Width
5.21(Max)
Package Length
16.13(Max)
PCB changed
3
Tab
Tab
Supplier Package
PLUS 247
MSL
-
Qualification
-
Continuous Drain Current Id
90A
Vds - Drain-Source Breakdown Voltage
200 V
Vgs th - Gate-Source Threshold Voltage
4 V
Pd - Power Dissipation
890 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Qg - Gate Charge
205 nC
Rds On - Drain-Source Resistance
44 mOhms
Id - Continuous Drain Current
90 A
零件状态
活跃
技术
Si
引脚数量
3
配置
Single
通道数量
1 Channel
功率耗散
890W
信道型
P