Littelfuse IXTY15P15T

包装/外壳

TO-252-3

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TrenchP

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

150

Maximum Gate Source Voltage (V)

±15

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

15

Maximum Gate Source Leakage Current (nA)

50

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

240@10V

Typical Gate Charge @ Vgs (nC)

48@10V

Typical Gate Charge @ 10V (nC)

48

Typical Input Capacitance @ Vds (pF)

3650@25V

Maximum Power Dissipation (mW)

150000

Typical Fall Time (ns)

11

Typical Rise Time (ns)

14

Typical Turn-Off Delay Time (ns)

36

Typical Turn-On Delay Time (ns)

21

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

2.38(Max)

Package Width

6.22(Max)

Package Length

6.73(Max)

PCB changed

2

Tab

Tab

Supplier Package

DPAK

Vds - Drain-Source Breakdown Voltage

150 V

Transistor Polarity

P-Channel

Mounting Styles

SMD/SMT

Rds On - Drain-Source Resistance

240 mOhms

Id - Continuous Drain Current

15 A

零件状态

活跃

技术

Si

引脚数量

3

配置

Single

信道型

P