Littelfuse MMIX1F160N30T

包装/外壳

SMPD-24

EU RoHS

符合免除

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

HiperFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

300

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

5

Maximum Continuous Drain Current (A)

102

Maximum Gate Source Leakage Current (nA)

200

Maximum IDSS (uA)

50

Maximum Drain Source Resistance (mOhm)

20@10V

Typical Gate Charge @ Vgs (nC)

376@10V

Typical Gate Charge @ 10V (nC)

376

Typical Input Capacitance @ Vds (pF)

24500@25V

Maximum Power Dissipation (mW)

570000

Typical Fall Time (ns)

23

Typical Rise Time (ns)

68

Typical Turn-Off Delay Time (ns)

90

Typical Turn-On Delay Time (ns)

34

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

5.55(Max)

Package Width

23.25(Max)

Package Length

25.25(Max)

PCB changed

21

Supplier Package

SMPD

Vds - Drain-Source Breakdown Voltage

300 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

570 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

376 nC

Rds On - Drain-Source Resistance

20 mOhms

Id - Continuous Drain Current

102 A

零件状态

活跃

技术

Si

引脚数量

21

配置

Single

通道数量

1 Channel

信道型

N