参数名
参数值
参数名
参数值
Supplier Package
SMPD-X
Standard Package Name
SMD
PCB changed
21
Package Length
25.25(Max)
Package Width
23.25(Max)
Package Height
5.55(Max)
Mounting
表面贴装
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Typical Turn-On Delay Time (ns)
46
Typical Turn-Off Delay Time (ns)
94
Typical Rise Time (ns)
25
Typical Fall Time (ns)
13
Maximum Power Dissipation (mW)
520000
Typical Input Capacitance @ Vds (pF)
16200@25V
Typical Gate Charge @ 10V (nC)
268
Typical Gate Charge @ Vgs (nC)
268@10V
Maximum Drain Source Resistance (MOhm)
16@10V
Maximum IDSS (uA)
50
Maximum Gate Source Leakage Current (nA)
200
Maximum Continuous Drain Current (A)
108
Maximum Gate Threshold Voltage (V)
5
Maximum Gate Source Voltage (V)
±20
Maximum Drain Source Voltage (V)
300
Number of Elements per Chip
1
Channel Mode
Enhancement
Process Technology
HiperFET
Category
功率MOSFET
PPAP
无
Automotive
无
HTS
8541.29.00.95
ECCN (US)
EAR99
EU RoHS
Compliant
Typical Turn-On Delay Time
46 ns
Pd - Power Dissipation
520 W
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Rds On - Drain-Source Resistance
16 mOhms
Typical Turn-Off Delay Time
94 ns
系列
HiPerFET
零件状态
活跃
类型
Polar3 HiPerFET
子类别
Discrete Semiconductor Modules
技术
Si
引脚数量
21
配置
Single
上升时间
25 ns
产品类别
Discrete Semiconductor Modules
信道型
N
产品
功率MOSFET模块