MagnaChip Semiconductor DL2G50SH12A
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DL2G50SH12A
1520-DL2G50SH12A
晶体管 - IGBT - 模块
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Trans IGBT Module N-CH 1200V 75A 340000mW 6-Pin Case 6DM-2
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DL2G50SH12A详情
MagnaChip Semiconductor DL2G50SH12A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Typical Collector Emitter Saturation Voltage (V)
1.8
Maximum Collector-Emitter Voltage (V)
1200
Maximum Power Dissipation (mW)
340000
Maximum Gate Emitter Voltage (V)
±20
Maximum Continuous Collector Current (A)
75
Maximum Gate Emitter Leakage Current (uA)
0.2
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Supplier Package
Case 6DM-2
Military
无
Mounting
通孔
Package Height
34
Package Length
66
Package Width
8.15(Max)
PCB changed
6
零件状态
Obsolete
引脚数量
6
配置
Dual
信道型
N
RoHS状态
供应商未确认
DL2G50SH12A拓展信息
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