MagnaChip Semiconductor MPMD150B120RH
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MPMD150B120RH
1520-MPMD150B120RH
晶体管 - IGBT - 模块
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Trans IGBT Module N-CH 1200V 200A 833000mW 7-Pin Case 7DM-3
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MPMD150B120RH详情
MagnaChip Semiconductor MPMD150B120RH重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
Panel, Screw
引脚数
7
ECCN (US)
EAR99
Typical Collector Emitter Saturation Voltage (V)
2.7
Maximum Collector-Emitter Voltage (V)
1200
Maximum Power Dissipation (mW)
833000
Maximum Gate Emitter Voltage (V)
±20
Maximum Continuous Collector Current (A)
200
Maximum Gate Emitter Leakage Current (uA)
0.5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Standard Package Name
Case 7DM-3
Supplier Package
Case 7DM-3
Military
无
Mounting
Screw
Package Height
29.75(Max)
Package Length
108.5
Package Width
62.5
PCB changed
7
RoHS
Compliant
Package Description
,
Reflow Temperature-Max (s)
未说明
Rohs Code
有
Manufacturer Part Number
MPMD150B120RH
Manufacturer
MagnaChip Semiconductor Ltd
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MAGNACHIP SEMICONDUCTOR LTD
Risk Rank
5.84
零件状态
Obsolete
最高工作温度
150 °C
最小工作温度
-55 °C
最大功率耗散
833 W
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
unknown
引脚数量
7
配置
Dual
元素配置
Dual
集电极发射器电压(VCEO)
1.2 kV
最大集电极电流
150 A
信道型
N
宽度
62.5 mm
高度
20.5 mm
长度
108.5 mm
RoHS状态
符合RoHS标准
辐射硬化
无
MPMD150B120RH拓展信息
MagnaChip
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
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