DL2G75SH6N
DL2G75SH6N

注:图像仅供参考,请参阅产品规格

技术文档 技术文档

PDF列表 PDF文档列表
免费送样

MagnaChip Semiconductor DL2G75SH6N

  • 收藏
  • 对比

型号

DL2G75SH6N

utmel 编号

1520-DL2G75SH6N

商品类别

晶体管 - IGBT - 模块

封装

--

交货地

大陆

交期(工作日)

立即发货

ROHS

ECAD

简介

Trans IGBT Module N-CH 600V 100A 300000mW 6-Pin Case 6DM-2

起订量

1最小包装量--

添加到询价列表
DL2G75SH6N
DL2G75SH6N MagnaChip Semiconductor Trans IGBT Module N-CH 600V 100A 300000mW 6-Pin Case 6DM-2

请发送询价,我们将立即回复。

库存:

请发送询价,我们将立即回复。

*
验证码
在线咨询

DL2G75SH6N详情

MagnaChip Semiconductor DL2G75SH6N重要参数规格及、参数值,及相似型号如下:

  • 参数名
    参数值
    全选
  • 参数名
    参数值
    全选
  • ECCN (US)

    EAR99

  • Maximum Collector-Emitter Voltage (V)

    600

  • Typical Collector Emitter Saturation Voltage (V)

    2.1

  • Maximum Gate Emitter Voltage (V)

    ±20

  • Maximum Power Dissipation (mW)

    300000

  • Maximum Continuous Collector Current (A)

    100

  • Maximum Gate Emitter Leakage Current (uA)

    0.1

  • Minimum Operating Temperature (°C)

    -40

  • Maximum Operating Temperature (°C)

    150

  • Supplier Package

    Case 6DM-2

  • Military

  • Mounting

    通孔

  • Package Height

    34

  • Package Length

    66

  • Package Width

    8.15(Max)

  • PCB changed

    6

  • 零件状态

    Obsolete

  • 引脚数量

    6

  • 配置

    Dual

  • 信道型

    N

  • RoHS状态

    供应商未确认

0个相似型号

技术文档: MagnaChip Semiconductor DL2G75SH6N.

DL2G75SH6N拓展信息

MPMC100B120RH
MPMC100B120RH

MagnaChip

MPMC200B120RH
MPMC200B120RH

MagnaChip Semiconductor

DM2G50SH6N
DM2G50SH6N

MagnaChip Semiconductor

MPMC150B120RH
MPMC150B120RH

MagnaChip Semiconductor

MPMB50B120RH
MPMB50B120RH

MagnaChip Semiconductor

MPMD100B120RH
MPMD100B120RH

MagnaChip Semiconductor

MPMD150B120RH
MPMD150B120RH

MagnaChip Semiconductor

DM2G150SH12A
DM2G150SH12A

MagnaChip Semiconductor

DM1GL75SH12A
DM1GL75SH12A

MagnaChip Semiconductor

DM2G200SH12AE
DM2G200SH12AE

MagnaChip Semiconductor

索引: # 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z