MagnaChip Semiconductor DL2G75SH6N
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DL2G75SH6N
1520-DL2G75SH6N
晶体管 - IGBT - 模块
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Trans IGBT Module N-CH 600V 100A 300000mW 6-Pin Case 6DM-2
1最小包装量--
DL2G75SH6N详情
MagnaChip Semiconductor DL2G75SH6N重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Maximum Collector-Emitter Voltage (V)
600
Typical Collector Emitter Saturation Voltage (V)
2.1
Maximum Gate Emitter Voltage (V)
±20
Maximum Power Dissipation (mW)
300000
Maximum Continuous Collector Current (A)
100
Maximum Gate Emitter Leakage Current (uA)
0.1
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Supplier Package
Case 6DM-2
Military
无
Mounting
通孔
Package Height
34
Package Length
66
Package Width
8.15(Max)
PCB changed
6
零件状态
Obsolete
引脚数量
6
配置
Dual
信道型
N
RoHS状态
供应商未确认
DL2G75SH6N拓展信息
MagnaChip
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
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