MagnaChip Semiconductor DM2G150SH12AE
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DM2G150SH12AE
1520-DM2G150SH12AE
晶体管 - IGBT - 模块
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Trans IGBT Module N-CH 1200V 200A 1100000mW 7-Pin Case 7DM-2
1最小包装量--
DM2G150SH12AE详情
MagnaChip Semiconductor DM2G150SH12AE重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Maximum Collector-Emitter Voltage (V)
1200
Typical Collector Emitter Saturation Voltage (V)
1.8
Maximum Gate Emitter Voltage (V)
±20
Maximum Power Dissipation (mW)
1100000
Maximum Continuous Collector Current (A)
200
Maximum Gate Emitter Leakage Current (uA)
0.25
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Supplier Package
Case 7DM-2
Military
无
Mounting
Screw
Package Height
29.95(Max)
Package Length
94
Package Width
48
PCB changed
7
零件状态
Obsolete
引脚数量
7
配置
Dual
信道型
N
RoHS状态
供应商未确认
DM2G150SH12AE拓展信息
MagnaChip
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
MagnaChip Semiconductor
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