MagnaChip Semiconductor DM2G150SH6NE
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DM2G150SH6NE
1520-DM2G150SH6NE
晶体管 - IGBT - 模块
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Trans IGBT Module N-CH 600V 175A 568000mW 7-Pin Case 7DM-1
1最小包装量--
DM2G150SH6NE详情
MagnaChip Semiconductor DM2G150SH6NE重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
EAR99
Typical Collector Emitter Saturation Voltage (V)
2.1
Maximum Collector-Emitter Voltage (V)
600
Maximum Power Dissipation (mW)
568000
Maximum Gate Emitter Voltage (V)
±20
Maximum Continuous Collector Current (A)
175
Maximum Gate Emitter Leakage Current (uA)
0.15
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Automotive
Unknown
Supplier Package
Case 7DM-1
Military
无
Mounting
Screw
Package Length
93
Package Width
35
PCB changed
7
零件状态
Obsolete
引脚数量
7
配置
Dual
信道型
N
RoHS状态
供应商未确认
DM2G150SH6NE拓展信息
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MagnaChip Semiconductor
MagnaChip Semiconductor
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