Microchip Technology ARF449BG

包装/外壳

TO-247-3

供应商器件包装

TO-247

RoHS

Details

Transistor Polarity

N-Channel

Id - Continuous Drain Current

9 A

Vds - Drain-Source Breakdown Voltage

450 V

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Mounting Styles

通孔

Channel Mode

Enhancement

Fall Time

3 ns

Forward Transconductance - Min

3 mS

Pd - Power Dissipation

165 W

Factory Pack QuantityFactory Pack Quantity

1

Vgs - Gate-Source Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

5 V

Unit Weight

1.340411 oz

Continuous Drain Current Id

9

Package

Bulk

Base Product Number

ARF449

厂商

微芯片技术

Product Status

Obsolete

Voltage Rated

450 V

包装

Tube

系列

-

类型

射频功率MOSFET

额定电流

9A

频率

81.36MHz

工作频率

120 MHz

配置

N-Channel

功率耗散

165

输出功率

90 W

上升时间

3.1 ns

工作温度范围

- 55 C to + 150 C

增益

13 dB

信道型

N通道

功率 - 输出

90W

噪声图

-

电压-测试

150 V