参数名
参数值
参数名
参数值
包装/外壳
SOT-23-3
安装类型
表面贴装
表面安装
YES
供应商器件包装
SOT-23
终端数量
3
晶体管元件材料
SILICON
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
50 V
Id - Continuous Drain Current
220 mA
Rds On - Drain-Source Resistance
3 Ohms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
800 mV
Qg - Gate Charge
-
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
350 mW
Channel Mode
Enhancement
Forward Transconductance - Min
100 S
Factory Pack QuantityFactory Pack Quantity
3000
Typical Turn-Off Delay Time
19 ns
Typical Turn-On Delay Time
3.8 ns
Unit Weight
0.000282 oz
Package
Bulk
Base Product Number
BSS138
Current - Continuous Drain (Id) @ 25℃
220mA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
厂商
Micro Commercial Co
Power Dissipation (Max)
350mW
Product Status
活跃
Package Description
SMALL OUTLINE, R-PDSO-G3
Package Style
小概要
Moisture Sensitivity Levels
1
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Min
-55 °C
Reflow Temperature-Max (s)
10
Operating Temperature-Max
150 °C
Rohs Code
有
Manufacturer Part Number
BSS138A-TP
Package Shape
RECTANGULAR
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
MICRO COMMERCIAL COMPONENTS
Risk Rank
1.56
Drain Current-Max (ID)
0.22 A
系列
N-Ch Polarity
包装
MouseReel
操作温度
-55°C ~ 150°C (TJ)
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
JESD-30代码
R-PDSO-G3
配置
Single
通道数量
1 Channel
操作模式
增强型MOSFET
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
3Ohm @ 500mA, 10V
不同 Id 时 Vgs(th)(最大值)
1.45V @ 250µA
输入电容(Ciss)(Max)@Vds
22.8 pF @ 25 V
漏源电压 (Vdss)
50 V
Vgs(最大值)
±20V
极性/通道类型
N-CHANNEL
晶体管类型
1 N- Channel
漏极-源极导通最大电阻
1.6 Ω
DS 击穿电压-最小值
50 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
0.35 W
场效应管特性
-