参数名
参数值
参数名
参数值
包装/外壳
SOT-723-3
安装类型
表面贴装
表面安装
YES
供应商器件包装
SOT-723
终端数量
3
晶体管元件材料
SILICON
RoHS
Details
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
100 mA
Rds On - Drain-Source Resistance
8 Ohms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
800 mV
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
150 mW
Fall Time
80 ns
Forward Transconductance - Min
20 mS
Factory Pack QuantityFactory Pack Quantity
8000
Typical Turn-Off Delay Time
80 ns
Typical Turn-On Delay Time
15 ns
Unit Weight
0.000053 oz
Package
Bulk
Base Product Number
MC3541
Current - Continuous Drain (Id) @ 25℃
100mA
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4V
厂商
Micro Commercial Co
Power Dissipation (Max)
150mW
Product Status
活跃
Package Description
SMALL OUTLINE, R-PDSO-F3
Package Style
小概要
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Min
-55 °C
Operating Temperature-Max
150 °C
Rohs Code
有
Manufacturer Part Number
MC3541-TP
Package Shape
RECTANGULAR
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
MICRO COMMERCIAL COMPONENTS
Risk Rank
5.7
Drain Current-Max (ID)
0.1 A
系列
N-Ch Polarity
包装
Reel
操作温度
-55°C ~ 150°C
ECCN 代码
EAR99
端子位置
DUAL
终端形式
FLAT
Reach合规守则
compliant
JESD-30代码
R-PDSO-F3
配置
Single
通道数量
1 Channel
操作模式
增强型MOSFET
场效应管类型
N-Channel
晶体管应用
SWITCHING
Rds On(Max)@Id,Vgs
8Ohm @ 10mA, 4V
不同 Id 时 Vgs(th)(最大值)
1.5V @ 100µA
输入电容(Ciss)(Max)@Vds
13 pF @ 5 V
上升时间
35 ns
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
极性/通道类型
N-CHANNEL
晶体管类型
1 N- Channel
漏极-源极导通最大电阻
8 Ω
DS 击穿电压-最小值
30 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
0.15 W
场效应管特性
-