Micro Commercial Components (MCC) SICW080N120Y-BP

包装/外壳

TO-247-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

38 A

Rds On - Drain-Source Resistance

85 mOhms

Vgs - Gate-Source Voltage

- 8 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

3.6 V

Qg - Gate Charge

41 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

220 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

1800

系列

SICFET

通道数量

1 Channel