Mitsubishi Materials U.S.A CM1200E4C-34N

包装/外壳

Module

表面安装

NO

终端数量

7

晶体管元件材料

SILICON

RoHS

N

Collector- Emitter Voltage VCEO Max

1700 V

Collector-Emitter Saturation Voltage

2.15 V

Continuous Collector Current at 25 C

1200 A

Gate-Emitter Leakage Current

0.5 uA

Pd - Power Dissipation

6500 W

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 125 C

Maximum Gate Emitter Voltage

20 V

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

1

Manufacturer Part Number

CM1200E4C-34N

Package Description

FLANGE MOUNT, R-XUFM-X7

Package Style

FLANGE MOUNT

Package Body Material

UNSPECIFIED

Turn-on Time-Nom (ton)

1400 ns

Turn-off Time-Nom (toff)

1500 ns

Operating Temperature-Max

150 °C

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

MITSUBISHI ELECTRIC CORP

Risk Rank

5.25

Part Package Code

MODULE

包装

Bulk

系列

CM1200

端子位置

UPPER

终端形式

UNSPECIFIED

Reach合规守则

unknown

引脚数量

7

JESD-30代码

R-XUFM-X7

资历状况

不合格

配置

Dual

箱体转运

ISOLATED

晶体管应用

电源控制

极性/通道类型

N-CHANNEL

最大耗散功率(Abs)

6500 W

集电极电流-最大值(IC)

1200 A

集电极-发射器电压-最大值

1700 V

栅极-发射极电压-最大值

20 V

VCEsat-最大值

2.8 V

产品

IGBT硅模块

高度(毫米)

38 mm