Mitsubishi Materials U.S.A PM200DV1A120
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PM200DV1A120
1645-PM200DV1A120
晶体管 - IGBT - 模块
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IGBT Modules IPM MODULE V1-SERIES
1最小包装量--
PM200DV1A120详情
Mitsubishi Materials U.S.A PM200DV1A120重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
Details
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.65 V
Continuous Collector Current at 25 C
200 A
Gate-Emitter Leakage Current
-
Pd - Power Dissipation
1388 W
Minimum Operating Temperature
- 20 C
Maximum Operating Temperature
+ 150 C
Factory Pack QuantityFactory Pack Quantity
10
Manufacturer Part Number
PM200DV1A120
配置
Dual
产品
IGBT硅模块
PM200DV1A120拓展信息
Mitsubishi Materials U.S.A
Mitsubishi Materials U.S.A
Mitsubishi Materials U.S.A
Mitsubishi Materials U.S.A
Mitsubishi Materials U.S.A
Mitsubishi Materials U.S.A
Mitsubishi Materials U.S.A
Mitsubishi Materials U.S.A
Mitsubishi Materials U.S.A
Mitsubishi Materials U.S.A







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