Nexperia USA Inc. PDTC114EQCZ

安装类型

Surface Mount, Wettable Flank

包装/外壳

3-XDFN Exposed Pad

供应商器件包装

DFN1412D-3

厂商

Nexperia USA Inc.

Product Status

Obsolete

Current-Collector (Ic) (Max)

100 mA

Number of Elements per Chip

3

Package Type

DFN1412D-3

Maximum Collector Emitter Voltage

50 V

Maximum DC Collector Current

100 mA

Emitter- Base Voltage VEBO

10 V

Pd - Power Dissipation

450 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

30 at 5 mA, 5 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Part # Aliases

934660902147

Manufacturer

Nexperia

Brand

Nexperia

RoHS

Details

Collector- Emitter Voltage VCEO Max

50 V

Typical Resistor Ratio

1

Typical Input Resistor

10 kOhms

系列

-

包装

MouseReel

子类别

Transistors

配置

Single

功率 - 最大

360 mW

产品类别

BJTs - Bipolar Transistors - Pre-Biased

晶体管类型

NPN - Pre-Biased

最小直流增益（hFE）@ Ic, Vce

30 @ 5mA, 5V

最大集极截止电流

100nA

不同 Ib, Ic 时 Vce 饱和度（最大值）

100mV @ 500μA, 10mA

电压 - 集射极击穿（最大值）

50 V

频率转换

230 MHz

电阻基(R1)

10 kOhms

连续集电极电流

100 mA

电阻-发射极基极(R2)

10 kOhms

产品类别

Bipolar Transistors - Pre-Biased