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价格梯度
内地含税价
1
¥0.236103
500
¥0.173603
1000
¥0.144669
2000
¥0.132726
5000
¥0.124039
10000
¥0.115392
15000
¥0.111595
50000
¥0.109728
Nexperia USA Inc. PDTC143EQCZ
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- 对比
PDTC143EQCZ
1729-PDTC143EQCZ
晶体管 - 双极(BJT)- 单,预偏置
3-XDFN Exposed Pad
大陆
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PDTC143EQC/SOT8009/DFN1412D-3
--最小包装量--
¥
总价: ¥
PDTC143EQCZ详情
Nexperia USA Inc. PDTC143EQCZ重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
Surface Mount, Wettable Flank
包装/外壳
3-XDFN Exposed Pad
供应商器件包装
DFN1412D-3
厂商
Nexperia USA Inc.
Product Status
Obsolete
Current-Collector (Ic) (Max)
100 mA
Number of Elements per Chip
3
Package Type
DFN1412D-3
Maximum Collector Emitter Voltage
50 V
Maximum DC Collector Current
100 mA
Typical Resistor Ratio
1
Pd - Power Dissipation
450 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
30 at 10 mA, 5 V
Typical Input Resistor
4.7 kOhms
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Collector- Emitter Voltage VCEO Max
50 V
系列
-
配置
Single
功率 - 最大
360 mW
晶体管类型
NPN - Pre-Biased
最小直流增益(hFE)@ Ic, Vce
30 @ 10mA, 5V
最大集极截止电流
100nA
不同 Ib, Ic 时 Vce 饱和度(最大值)
100mV @ 500μA, 10mA
电压 - 集射极击穿(最大值)
50 V
频率转换
230 MHz
电阻基(R1)
4.7 kOhms
连续集电极电流
100 mA
电阻-发射极基极(R2)
4.7 kOhms
PDTC143EQCZ拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.






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