NXP Semiconductors BT258S-800R,118

工厂交货时间

6 Weeks

表面安装

YES

终端数量

2

ECCN (US)

EAR99

Repetitive Peak Reverse Voltage (V)

800

Maximum Holding Current (mA)

6

Surge Current Rating (A)

82

Maximum Gate Trigger Current (mA)

0.2

Maximum Gate Trigger Voltage (V)

1

Maximum Rate of Rise of On-State Current (A/us)

50

Maximum Rate of Rise of Off-State Voltage (V/us)

100(Typ)

HTS

8541.30.00.80

Package Length

6.73(Max)

Package Height

2.38(Max)

Mounting

表面贴装

Military

无

Supplier Package

DPAK

AEC Qualified

Unknown

Maximum Operating Temperature (°C)

125

Minimum Operating Temperature (°C)

-40

Phase Control

无

Repetitive Peak Off-State Current (mA)

0.5

RMS On-State Current (A)

8

Rated Average On-State Current (A)

5

Repetitive Peak Forward Blocking Voltage (V)

800

Peak On-State Voltage (V)

1.6@16A

Maximum Gate Peak Inverse Voltage (V)

5

Tab

Tab

PCB changed

2

Package Width

6.22(Max)

Package Description

PLASTIC, SC-63, TO-252, DPAK-3/2

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

40

Operating Temperature-Max

125 °C

Rohs Code

有

Manufacturer Part Number

BT258S-800R,118

Package Shape

RECTANGULAR

Manufacturer

WeEn Semiconductor Co Ltd

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

WEEN SEMICONDUCTORS CO LTD

Risk Rank

0.63

JESD-609代码

e3

零件状态

活跃

端子表面处理

TIN

附加功能

SENSITIVE GATE

HTS代码

8541.30.00.80

端子位置

SINGLE

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

not_compliant

引脚数量

3

参考标准

IEC-60134

JESD-30代码

R-PSSO-G2

配置

SINGLE

箱体转运

ANODE

JEDEC-95代码

TO-252AA

触发装置类型

SCR

重复峰值关态电压

800 V

重复峰值反向电压

800 V

均方根通态电流-最大值

8 A

直流栅极触发电流（最大）

0.2 mA

RoHS状态

是,有豁免