NXP Semiconductors BUK765R0-100E
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BUK765R0-100E
1786-BUK765R0-100E
晶体管 - 特殊用途
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大陆
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120A, 100V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2
1最小包装量--
BUK765R0-100E详情
NXP Semiconductors BUK765R0-100E重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
Contact plating
gold-plated
Number of pins
38
终端数量
2
晶体管元件材料
SILICON
外壳材料
1
Rohs Code
有
Part Life Cycle Code
Transferred
Ihs Manufacturer
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PSSO-G2
Drain Current-Max (ID)
120 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Type of connector
pin strips
Connector
socket
Kind of connector
female
Spatial orientation
straight
Contacts pitch
2.54mm
Electrical mounting
THT
Connector pinout layout
2x19
Row pitch
2.54mm
Gross weight
3.61 g
Operating temperature
-40...163°C
ECCN 代码
EAR99
端子表面处理
PURE TIN
附加功能
雪崩 额定
HTS代码
8541.29.00.75
端子位置
SINGLE
终端形式
鸥翼
Reach合规守则
unknown
Current rating
1.5A
参考标准
AEC-Q101; IEC-60134
JESD-30代码
R-PSSO-G2
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.005 Ω
脉冲漏极电流-最大值(IDM)
650 A
DS 击穿电压-最小值
100 V
雪崩能量等级(Eas)
385 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
Rated voltage
60V
个人资料
beryllium copper
饱和电流
1
Plating thickness
0.75µm
Flammability rating
UL94V-0
BUK765R0-100E拓展信息
NXP
NXP
NXP
NXP
NXP
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NXP Semiconductors
NXP Semiconductors
NXP Semiconductors
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