NXP Semiconductors MCR08BT1,115

工厂交货时间

6 Weeks

表面安装

YES

终端数量

4

ECCN (US)

EAR99

HTS

8541.30.00.80

Maximum Rate of Rise of Off-State Voltage (V/us)

800(Typ)

Maximum Rate of Rise of On-State Current (A/us)

50

Maximum Gate Trigger Voltage (V)

0.8

Maximum Gate Trigger Current (mA)

0.2

Surge Current Rating (A)

9

Maximum Holding Current (mA)

5

Repetitive Peak Reverse Voltage (V)

200

Maximum Gate Peak Inverse Voltage (V)

5

Peak On-State Voltage (V)

[email protected]

Repetitive Peak Forward Blocking Voltage (V)

200

Rated Average On-State Current (A)

0.5

RMS On-State Current (A)

0.8

Repetitive Peak Off-State Current (mA)

0.1

Phase Control

无

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

125

Supplier Package

SC-73

Military

无

Mounting

表面贴装

Package Height

1.7(Max)

Package Length

6.7(Max)

Package Width

3.7(Max)

PCB changed

3

Tab

Tab

Package Description

SMALL OUTLINE, R-PDSO-G4

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

40

Operating Temperature-Max

125 °C

Rohs Code

有

Manufacturer Part Number

MCR08BT1,115

Package Shape

RECTANGULAR

Manufacturer

WeEn Semiconductor Co Ltd

Number of Elements

1

Part Life Cycle Code

活跃

Samacsys Description

WEEN SEMICONDUCTORS - MCR08BT1,115 - THYRISTOR 0.8A 200V SOT223

Ihs Manufacturer

WEEN SEMICONDUCTORS CO LTD

Risk Rank

0.67

JESD-609代码

e3

零件状态

活跃

ECCN 代码

EAR99

端子表面处理

TIN

附加功能

SENSITIVE GATE

HTS代码

8541.30.00.80

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

compliant

引脚数量

4

参考标准

IEC-60134

JESD-30代码

R-PDSO-G4

配置

SINGLE

箱体转运

ANODE

触发装置类型

SCR

重复峰值关态电压

200 V

重复峰值反向电压

200 V

均方根通态电流-最大值

0.8 A

直流栅极触发电流（最大）

0.2 mA

RoHS状态

符合RoHS标准