onsemi NXH008P120M3F1PG

包装/外壳

PIM-18

RoHS

符合RoHS标准

Mounting Styles

螺钉安装

Transistor Polarity

1 N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

145 A

Rds On - Drain-Source Resistance

10.9 mOhms

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

4.4 V

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

382 W

Fall Time

12 ns

Factory Pack Quantity

28

Typical Delay Time

17 ns

Typical Turn-Off Delay Time

97 ns

Typical Turn-On Delay Time

17 ns

包装

Tray

配置

Single

通道数量

1 Channel

上升时间

17 ns

产品

电源模块

高度

12 mm

长度

48 mm

宽度

33.8 mm