onsemi NXV65HR82DS1

安装类型

通孔

包装/外壳

16-SSIP Exposed Pad, Formed Leads

厂商

onsemi

Package

Tube

Product Status

活跃

Number of Elements per Chip

4

Package Type

APMCA-A16

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

126 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 125 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

12

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

79.7 nC

Rds On - Drain-Source Resistance

82 mOhms

RoHS

Details

Id - Continuous Drain Current

26 A

Continuous Drain Current Id

26A

系列

Automotive, AEC-Q101

包装

Tube

类型

MOSFET

子类别

MOSFETs

技术

Si

引脚数量

16

电压-隔离度

5000Vrms

配置

H-Bridge

通道数量

4 Channel

电压

650 V

电流

26 A

功率耗散

126W

产品类别

MOSFET

信道型

N通道

产品类别

MOSFET