ON Semiconductor FGH4L50T65SQD
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FGH4L50T65SQD
1807-FGH4L50T65SQD
晶体管 - IGBT - 单个
TO-247-4
大陆
立即发货

IGBT Transistors FS4 T TO247 50A 650V 4L
1最小包装量--
FGH4L50T65SQD详情
ON Semiconductor FGH4L50T65SQD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-4
Mounting Styles
通孔
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
- 20 V, + 20 V
Continuous Collector Current at 25 C
80 A
Pd - Power Dissipation
268 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Factory Pack QuantityFactory Pack Quantity
30
Package Type
TO-247-4LD
Maximum Collector Emitter Voltage
650 V
Package
Tube
厂商
onsemi
Product Status
Obsolete
系列
-
配置
Single
功率耗散
268W
连续集电极电流
80A
FGH4L50T65SQD拓展信息
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