FGY75T120SWD
FGY75T120SWD

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    ¥70.618526

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    ¥66.621254

  • 100

    ¥62.850235

  • 500

    ¥59.292673

  • 1000

    ¥55.936484

ON Semiconductor FGY75T120SWD

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型号

FGY75T120SWD

utmel 编号

1807-FGY75T120SWD

商品类别

晶体管 - IGBT - 单个

封装

TO-247-3

交货地

大陆

交期(工作日)

立即发货

ROHS

ECAD

简介

IGBT Transistors 1200V, 75A Field Stop VII Discrete IGBT in Power TO247-3L Packaging

起订量

--最小包装量--

单价:

¥

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FGY75T120SWD
FGY75T120SWD ON Semiconductor IGBT Transistors 1200V, 75A Field Stop VII Discrete IGBT in Power TO247-3L Packaging

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合计: ¥

库存:26100

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FGY75T120SWD详情

ON Semiconductor FGY75T120SWD重要参数规格及、参数值,及相似型号如下:

  • 参数名
    参数值
    全选
  • 参数名
    参数值
    全选
  • 包装/外壳

    TO-247-3

  • Collector- Emitter Voltage VCEO Max

    1.2 kV

  • Collector-Emitter Saturation Voltage

    1.68 V

  • Continuous Collector Current at 25 C

    150 A

  • Maximum Gate Emitter Voltage

    - 20 V, 20 V

  • Maximum Operating Temperature

    + 175 C

  • Minimum Operating Temperature

    - 55 C

  • Mounting Styles

    通孔

  • Pd - Power Dissipation

    503 W

  • 技术

    Si

  • 配置

    Single

0个相似型号

技术文档: ON Semiconductor FGY75T120SWD.

FGY75T120SWD拓展信息

HGTG30N60A4D
HGTG30N60A4D

ON Semiconductor

FGH40N60UFDTU
FGH40N60UFDTU

ON Semiconductor

FGH40N60SMD
FGH40N60SMD

ON Semiconductor

HGTG5N120BND
HGTG5N120BND

ON Semiconductor

FGA25N120ANTDTU-F109
FGA25N120ANTDTU-F109

ON Semiconductor

HGTG20N60B3D
HGTG20N60B3D

ON Semiconductor

HGTG12N60A4D
HGTG12N60A4D

ON Semiconductor

FGA25N120ANTDTU
FGA25N120ANTDTU

ON Semiconductor

HGTG20N60A4D
HGTG20N60A4D

ON Semiconductor

HGTP5N120BND
HGTP5N120BND

ON Semiconductor

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