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价格梯度
内地含税价
1
¥70.618526
10
¥66.621254
100
¥62.850235
500
¥59.292673
1000
¥55.936484
ON Semiconductor FGY75T120SWD
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FGY75T120SWD
1807-FGY75T120SWD
晶体管 - IGBT - 单个
TO-247-3
大陆
立即发货

IGBT Transistors 1200V, 75A Field Stop VII Discrete IGBT in Power TO247-3L Packaging
--最小包装量--
¥
总价: ¥
FGY75T120SWD详情
ON Semiconductor FGY75T120SWD重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
1.68 V
Continuous Collector Current at 25 C
150 A
Maximum Gate Emitter Voltage
- 20 V, 20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Styles
通孔
Pd - Power Dissipation
503 W
技术
Si
配置
Single
FGY75T120SWD拓展信息
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