ON Semiconductor FJP5555ATU
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FJP5555ATU
1807-FJP5555ATU
晶体管 - 双极性晶体管(BJT)- 单个
TO-220-3
大陆
立即发货

Bipolar Transistors - BJT
1最小包装量--
FJP5555ATU详情
ON Semiconductor FJP5555ATU重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-220-3
Package
Bulk
厂商
PEI-Genesis
Product Status
活跃
Emitter- Base Voltage VEBO
14 V
Pd - Power Dissipation
75 W
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
Collector-Emitter Saturation Voltage
1.5 V
Unit Weight
0.080072 oz
Minimum Operating Temperature
-
Factory Pack QuantityFactory Pack Quantity
2000
Mounting Styles
通孔
Gain Bandwidth Product fT
-
Manufacturer
onsemi
Brand
onsemi / Fairchild
Maximum DC Collector Current
5 A
DC Current Gain hFE Max
40
RoHS
Details
Collector- Emitter Voltage VCEO Max
400 V
系列
*
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
1.05 kV
产品类别
Bipolar Transistors - BJT
FJP5555ATU拓展信息
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