ON Semiconductor HGT1S14N36G3VLT_NL
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HGT1S14N36G3VLT_NL
1807-HGT1S14N36G3VLT_NL
晶体管 - IGBT - 单个
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Insulated Gate Bipolar Transistor, 18A, N-Channel, TO-263AB
1最小包装量--
HGT1S14N36G3VLT_NL详情
ON Semiconductor HGT1S14N36G3VLT_NL重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
2
晶体管元件材料
SILICON
Package Description
SMALL OUTLINE, R-PSSO-G2
Package Style
小概要
Package Body Material
PLASTIC/EPOXY
Turn-off Time-Nom (toff)
7000 ns
Manufacturer Part Number
HGT1S14N36G3VLT_NL
Package Shape
RECTANGULAR
Manufacturer
Rochester Electronics LLC
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
ROCHESTER ELECTRONICS INC
Risk Rank
5.61
Part Package Code
D2PAK
端子表面处理
哑光锡
端子位置
SINGLE
终端形式
鸥翼
Reach合规守则
unknown
引脚数量
3
JESD-30代码
R-PSSO-G2
资历状况
COMMERCIAL
配置
SINGLE WITH BUILT-IN DIODE AND RESISTOR
箱体转运
COLLECTOR
晶体管应用
汽车点火装置
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-263AB
集电极电流-最大值(IC)
18 A
HGT1S14N36G3VLT_NL拓展信息
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