ON Semiconductor HGT1S7N60B3
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HGT1S7N60B3
1807-HGT1S7N60B3
晶体管 - IGBT - 单个
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大陆
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Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
1最小包装量--
HGT1S7N60B3详情
ON Semiconductor HGT1S7N60B3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Risk Rank
5.63
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Part Life Cycle Code
活跃
Number of Elements
1
Manufacturer
Rochester Electronics LLC
Package Shape
RECTANGULAR
Manufacturer Part Number
HGT1S7N60B3
Rohs Code
无
Reflow Temperature-Max (s)
未说明
Turn-off Time-Nom (toff)
230 ns
Turn-on Time-Nom (ton)
24 ns
Package Body Material
PLASTIC/EPOXY
Moisture Sensitivity Levels
未说明
Package Style
IN-LINE
Package Description
PLASTIC PACKAGE-3
JESD-609代码
e0
无铅代码
无
端子表面处理
锡铅
附加功能
LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
端子位置
SINGLE
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
unknown
引脚数量
3
JESD-30代码
R-PSIP-T3
资历状况
COMMERCIAL
配置
SINGLE
箱体转运
COLLECTOR
晶体管应用
MOTOR CONTROL
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-262AA
集电极电流-最大值(IC)
14 A
集电极-发射器电压-最大值
600 V
HGT1S7N60B3拓展信息
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