ON Semiconductor HGTD3N60C3
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HGTD3N60C3
1807-HGTD3N60C3
晶体管 - IGBT - 单个
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Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA
1最小包装量--
HGTD3N60C3详情
ON Semiconductor HGTD3N60C3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Package Style
IN-LINE
Package Body Material
PLASTIC/EPOXY
Turn-on Time-Nom (ton)
5 ns
Turn-off Time-Nom (toff)
325 ns
Manufacturer Part Number
HGTD3N60C3
Package Shape
RECTANGULAR
Manufacturer
Rochester Electronics LLC
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Risk Rank
5.6
附加功能
LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSIP-T3
资历状况
COMMERCIAL
配置
SINGLE
箱体转运
COLLECTOR
晶体管应用
MOTOR CONTROL
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-251AA
集电极电流-最大值(IC)
6 A
集电极-发射器电压-最大值
600 V
HGTD3N60C3拓展信息
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