ON Semiconductor HGTG30N60C3D_NL
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HGTG30N60C3D_NL
1807-HGTG30N60C3D_NL
晶体管 - IGBT - 单个
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HGTG30N60 - Insulated Gate Bipolar Transistor, 63A, 600V, N-Channel, TO-247
1最小包装量--
HGTG30N60C3D_NL详情
ON Semiconductor HGTG30N60C3D_NL重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Package Style
FLANGE MOUNT
Moisture Sensitivity Levels
未说明
Package Body Material
PLASTIC/EPOXY
Turn-on Time-Nom (ton)
85 ns
Turn-off Time-Nom (toff)
550 ns
Reflow Temperature-Max (s)
未说明
Rohs Code
有
Manufacturer Part Number
HGTG30N60C3D_NL
Package Shape
RECTANGULAR
Manufacturer
Rochester Electronics LLC
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Risk Rank
5.58
无铅代码
有
端子表面处理
未说明
附加功能
低导通损耗
端子位置
SINGLE
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
unknown
JESD-30代码
R-PSFM-T3
资历状况
COMMERCIAL
配置
SINGLE WITH BUILT-IN DIODE
晶体管应用
MOTOR CONTROL
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-247
集电极电流-最大值(IC)
63 A
集电极-发射器电压-最大值
600 V
HGTG30N60C3D_NL拓展信息
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