ON Semiconductor MJD45H11-001G

表面安装

NO

材料

Si

终端数量

3

晶体管元件材料

SILICON

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

双极电源

Number of Elements per Chip

1

Maximum Collector-Emitter Voltage (V)

80

Maximum Emitter Base Voltage (V)

5

Operating Junction Temperature (°C)

-55 to 150

Maximum Base Emitter Saturation Voltage (V)

[email protected]@8A

Maximum Collector-Emitter Saturation Voltage (V)

[email protected]@8A

Maximum DC Collector Current (A)

8

Minimum DC Current Gain

60@2A@1V|40@4A@1V

Maximum Power Dissipation (mW)

1750

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

6.35(Max)

Package Width

2.38(Max)

Package Length

6.73(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-251

Supplier Package

IPAK

Package Description

IN-LINE, R-PSIP-T3

Package Style

IN-LINE

Package Body Material

PLASTIC/EPOXY

Manufacturer Package Code

CASE 369D-01

Reflow Temperature-Max (s)

40

Operating Temperature-Max

150 °C

Rohs Code

有

Transition Frequency-Nom (fT)

90 MHz

Manufacturer Part Number

MJD45H11-001G

Package Shape

RECTANGULAR

Manufacturer

安森美半导体

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

ON SEMICONDUCTOR

Risk Rank

5.35

包装

Rail

JESD-609代码

e3

无铅代码

有

零件状态

Obsolete

ECCN 代码

EAR99

类型

PNP

端子表面处理

哑光锡

子类别

其他晶体管

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

260

Reach合规守则

compliant

引脚数量

3

JESD-30代码

R-PSIP-T3

资历状况

不合格

配置

Single

箱体转运

COLLECTOR

晶体管应用

SWITCHING

极性/通道类型

PNP

最大耗散功率(Abs)

20 W

集电极电流-最大值(IC)

8 A

最小直流增益（hFE）

40

集电极-发射器电压-最大值

80 V