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ON Semiconductor MMBT3906-G
- 收藏
- 对比
MMBT3906-G
1807-MMBT3906-G
晶体管 - 双极性晶体管(BJT)- 单个
TO-236-3, SC-59, SOT-23-3
大陆
立即发货

MMBT3906-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at utmel
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MMBT3906-G详情
ON Semiconductor MMBT3906-G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-236-3, SC-59, SOT-23-3
供应商器件包装
SOT23-3 (TO-236)
材料
Si
EU RoHS
Compliant
ECCN (US)
EAR99
Automotive
无
PPAP
无
Category
双极小信号
Number of Elements per Chip
1
Maximum Collector Base Voltage (V)
40
Maximum Collector-Emitter Voltage (V)
40
Maximum Emitter Base Voltage (V)
5
Maximum Base Emitter Saturation Voltage (V)
0.85@1mA@10mA|0.95@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)
0.25@1mA@10mA|0.4@5mA@50mA
Maximum DC Collector Current (A)
0.2
Minimum DC Current Gain
[email protected]@1V|80@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V
Maximum Power Dissipation (mW)
300
Maximum Transition Frequency (MHz)
250(Min)
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Mounting
表面贴装
Package Height
0.94
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Lead Shape
Gull-wing
Package
Bulk
Current-Collector (Ic) (Max)
200 mA
厂商
onsemi
Product Status
Obsolete
操作温度
-55°C ~ 150°C (TJ)
系列
-
零件状态
Obsolete
类型
PNP
引脚数量
3
配置
Single
功率 - 最大
200 mW
晶体管类型
PNP
最小直流增益(hFE)@ Ic, Vce
100 @ 10mA, 1V
最大集极截止电流
100µA
不同 Ib, Ic 时 Vce 饱和度(最大值)
400mV @ 5mA, 50mA
电压 - 集射极击穿(最大值)
40 V
频率转换
300MHz
MMBT3906-G拓展信息
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