Panjit BSS123_R2_00001

包装/外壳

SOT-23-3

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

3.4 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

500 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

12000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

1.8 nC

Rds On - Drain-Source Resistance

10 Ohms

RoHS

Details

Typical Turn-Off Delay Time

8.2 ns

Id - Continuous Drain Current

170 mA

包装

Reel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

19 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET