参数名
参数值
参数名
参数值
安装类型
表面贴装
包装/外壳
TO-236-3, SC-59, SOT-23-3
供应商器件包装
SOT-23
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃
5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
厂商
Panjit International Inc.
Power Dissipation (Max)
1.25W (Ta)
Product Status
活跃
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
1.2V @ 250µA
Vds - Drain-Source Breakdown Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.2 V
Pd - Power Dissipation
1.25 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
6.7 nC
Rds On - Drain-Source Resistance
27 mOhms
Id - Continuous Drain Current
5.8 A
操作温度
-55°C ~ 150°C (TJ)
系列
-
技术
MOSFET (Metal Oxide)
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
27mOhm @ 5.8A, 4.5V
输入电容(Ciss)(Max)@Vds
513 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
6.7 nC @ 4.5 V
漏源电压 (Vdss)
20 V
Vgs(最大值)
±12V
场效应管特性
-