Panjit PJA3431_R1_00001

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

SOT-23

Voltage, Rating

100 V

Current - Continuous Drain (Id) @ 25℃

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

厂商

Panjit International Inc.

Power Dissipation (Max)

1.25W (Ta)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1V @ 250µA

Vds - Drain-Source Breakdown Voltage

20 V

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

1.25 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

1.7 nC

Rds On - Drain-Source Resistance

325 mOhms

Id - Continuous Drain Current

1.5 A

操作温度

-55°C ~ 150°C (TJ)

容差

1 %

温度系数

100 ppm/°C

电阻

13.5 Ω

最高工作温度

155 °C

最小工作温度

-55 °C

组成

Thin Film

额定功率

125 mW

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

325mOhm @ 1.5A, 4.5V

输入电容(Ciss)(Max)@Vds

165 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

1.7 nC @ 4.5 V

漏源电压 (Vdss)

20 V

Vgs（最大值）

±8V

场效应管特性

-

高度

650 µm