Panjit PJC138L_R1_00001

包装/外壳

SOT-323-3

安装类型

表面贴装

供应商器件包装

SOT-323

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

7 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

350 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000212 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

700 pC

Rds On - Drain-Source Resistance

7 Ohms

RoHS

Details

Typical Turn-Off Delay Time

21 ns

Id - Continuous Drain Current

1 A

Current - Continuous Drain (Id) @ 25℃

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

350mW (Ta)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.5V @ 250µA

系列

NFET-60TAMN

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.2Ohm @ 200mA, 10V

输入电容(Ciss)(Max)@Vds

15 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

0.7 nC @ 4.5 V

上升时间

22 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET