参数名
参数值
参数名
参数值
包装/外壳
SOT-323-3
安装类型
表面贴装
供应商器件包装
SOT-323
RoHS
Non-Compliant
Vds - Drain-Source Breakdown Voltage
20 V
Typical Turn-On Delay Time
8.9 ns
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
350 mW
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 8 V, + 8 V
Unit Weight
0.000212 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
2.2 nC
Rds On - Drain-Source Resistance
600 mOhms
Typical Turn-Off Delay Time
127 ns
Id - Continuous Drain Current
700 mA
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃
700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
厂商
Panjit International Inc.
Power Dissipation (Max)
350mW (Ta)
Product Status
活跃
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
1V @ 250µA
系列
NFET-20TAMP
包装
MouseReel
操作温度
-55°C ~ 150°C (TJ)
电阻
156.96 Ω
电容量
0 F
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
325mOhm @ 700mA, 4.5V
输入电容(Ciss)(Max)@Vds
165 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
2.2 nC @ 4.5 V
上升时间
37 ns
漏源电压 (Vdss)
20 V
Vgs(最大值)
±8V
产品类别
MOSFET
晶体管类型
1 P-Channel
场效应管特性
-
产品类别
MOSFET
达到SVHC
Unknown