参数名
参数值
参数名
参数值
包装/外壳
SOT-323-3
Vds - Drain-Source Breakdown Voltage
20 V
Typical Turn-On Delay Time
7.2 ns
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
350 mW
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 10 V, + 10 V
Unit Weight
0.000212 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
12000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
1.4 nC
Rds On - Drain-Source Resistance
6 Ohms
RoHS
Details
Typical Turn-Off Delay Time
85 ns
Id - Continuous Drain Current
500 mA
包装
Reel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
21 ns
产品类别
MOSFET
晶体管类型
1 P-Channel
产品类别
MOSFET