参数名
参数值
参数名
参数值
包装/外壳
SOT-323-3
Vds - Drain-Source Breakdown Voltage
60 V
Typical Turn-On Delay Time
2.7 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
350 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
0.000212 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
12000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
820 pC
Rds On - Drain-Source Resistance
4 Ohms
RoHS
Details
Typical Turn-Off Delay Time
3.8 ns
Id - Continuous Drain Current
250 mA
包装
Reel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
21 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET