Panjit PJD12P06-AU_L2_000A1

包装/外壳

TO-252AA-3

安装类型

表面贴装

供应商器件包装

TO-252

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

10.9 nC

Rds On - Drain-Source Resistance

155 mOhms

RoHS

Details

Typical Turn-Off Delay Time

20 ns

Id - Continuous Drain Current

12 A

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

4.4 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Qualification

AEC-Q101

Pd - Power Dissipation

50 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.010476 oz

Minimum Operating Temperature

- 55 C

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

2.6A (Ta), 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Panjit International Inc.

Power Dissipation (Max)

2W (Ta), 50W (Tc)

Product Status

不用于新设计

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

包装

Reel

操作温度

-55°C ~ 150°C (TJ)

系列

-

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

155mOhm @ 6A, 10V

输入电容(Ciss)(Max)@Vds

385 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

10.9 nC @ 10 V

上升时间

59 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P-Channel

场效应管特性

-

产品类别

MOSFET