Panjit PJD1NA60A_L2_00001

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

安装类型

表面贴装

供应商器件包装

TO-252

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

Product Status

Obsolete

Power Dissipation (Max)

28W (Tc)

厂商

Panjit International Inc.

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

1A (Ta)

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

28 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

3.1 nC

Rds On - Drain-Source Resistance

7.9 Ohms

Id - Continuous Drain Current

1 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7.9Ohm @ 500mA, 10V

输入电容(Ciss)(Max)@Vds

148 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

3.1 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

场效应管特性

-