Panjit PJD40N15_L2_00001

包装/外壳

TO-252AA-3

安装类型

表面贴装

供应商器件包装

TO-252

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

52 nC

Rds On - Drain-Source Resistance

35 mOhms

RoHS

Details

Typical Turn-Off Delay Time

35 ns

Id - Continuous Drain Current

40 A

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

3000

Minimum Operating Temperature

- 55 C

Unit Weight

0.010476 oz

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

131 W

Vgs th - Gate-Source Threshold Voltage

4 V

Typical Turn-On Delay Time

17 ns

Vds - Drain-Source Breakdown Voltage

150 V

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

5A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Panjit International Inc.

Power Dissipation (Max)

2W (Ta), 131W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

包装

Reel

系列

NFET-150SMN

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

35mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

2207 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

52 nC @ 10 V

上升时间

100 ns

漏源电压 (Vdss)

150 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET