Panjit PJD45N06A-AU_L2_000A1

包装/外壳

DO-214AB-2

安装类型

表面贴装

供应商器件包装

TO-252

Cd - Diode Capacitance

-

Qualification

AEC-Q101

Breakdown Voltage / V

100 V

Maximum Operating Temperature

+ 150 C

Vesd - Voltage ESD Contact

-

Unit Weight

0.009065 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Ipp - Peak Pulse Current

10.7 A

Pppm - Peak Pulse Power Dissipation

1.5 kW

Manufacturer

台湾半导体

Brand

台湾半导体

RoHS

Details

Vesd - Voltage ESD Air Gap

-

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

Power Dissipation (Max)

75W (Tc)

厂商

Panjit International Inc.

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

45A (Tc)

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Id - Continuous Drain Current

45 A

Typical Turn-Off Delay Time

49 ns

Rds On - Drain-Source Resistance

15 mOhms

Qg - Gate Charge

39 nC

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Transistor Polarity

N-Channel

Pd - Power Dissipation

75 W

Vgs th - Gate-Source Threshold Voltage

2.5 V

Typical Turn-On Delay Time

7.5 ns

Vds - Drain-Source Breakdown Voltage

60 V

系列

SMCJ90AH

包装

Reel

操作温度

-55°C ~ 175°C (TJ)

子类别

TVS Diodes / ESD Suppression Diodes

技术

Si

终端样式

SMD/SMT

工作电压

90 V

极性

单向

配置

Single

通道数量

1 Channel

箝位电压

146 V

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

12mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

2256 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

39 nC @ 10 V

上升时间

36 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

TVS 二极管

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

ESD Suppressors / TVS Diodes