参数名
参数值
参数名
参数值
安装类型
表面贴装
包装/外壳
8-SOIC (0.154, 3.90mm Width)
供应商器件包装
8-SOP
Dimensions
3,1x1,6mm
Insulation Voltage
400 V
RoHS
有
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃
3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
厂商
Panjit International Inc.
Power Dissipation (Max)
2.5W (Ta)
Product Status
活跃
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.5V @ 250µA
Vds - Drain-Source Breakdown Voltage
60 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
2.5 W
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
10 nC
Rds On - Drain-Source Resistance
110 mOhms
Id - Continuous Drain Current
3.2 A
系列
n/a
操作温度
-55°C ~ 150°C (TJ)
容差
±1 %
电阻
6.8 MOhm
组成
厚膜
技术
MOSFET (Metal Oxide)
注意
n/a
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
110mOhm @ 3.2A, 10V
输入电容(Ciss)(Max)@Vds
785 pF @ 30 V
门极电荷(Qg)(最大)@Vgs
10 nC @ 10 V
大小
1206
漏源电压 (Vdss)
60 V
Vgs(最大值)
±20V
场效应管特性
-
额定功率
0,25 W
高度
0,55 mm